Faisal Baig
@fuuast
Assistant Professor, Software Engineering
FUUAST, Islamabad
RESEARCH, TEACHING, or OTHER INTERESTS
Energy, Renewable Energy, Sustainability and the Environment, Energy Engineering and Power Technology, Signal Processing
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Khawla Fradi, Amal Bouich, Yousaf Hameed Khattak, Faisal Baig, Bechir Slimi, Bernabé Marí Soucase, and Radhouane Chtourou
Springer Science and Business Media LLC
AbstractPerovskite materials have emerged as promising candidates for next-generation photovoltaic devices due to their unique optoelectronic properties. In this study, we investigate the incorporation of bromine into cesium lead mixed iodide and bromide perovskites (CsPbI3(1-x)Br3x) to enhance their performance. By depositing films with varying bromine concentrations (x = 0, 0.25, 0.5, 0.75), we employ a combination of structural and optical characterization techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy, and photoluminescence. Our analysis reveals that introducing bromine leads to structural modifications, influencing the perovskite films’ optical properties and energy gap. Specifically, we observe semiconductor behavior with a tunable energy gap controlled by the intercalation of bromine atoms into the CsPbI3 lattice. Furthermore, heat treatment induces phase transitions in the perovskite films, affecting their optical responses and crystalline quality. SCAPS-1D simulations confirm the improved stability and efficiency of bromine-doped CsPbI3 films compared to undoped counterparts. Our findings demonstrate that bromine incorporation facilitates the formation of highly crystalline perovskite films with reduced trap defects and enhanced carrier transport properties. These results underscore the potential of bromine-doped CsPbI3 perovskites as promising materials for high-performance photovoltaic applications, paving the way for further optimization and device integration.
Hicham Zalrhi, Mouad Ouafi, Mohammed Regragui, Bernabé Marí Soucase, Faisal Baig, Yousaf Hameed Khattak, Ullah Shafi, Mohammed Abd-lefdil, and Lahoucine Atourki
Royal Society of Chemistry (RSC)
Lithium doping improves CsPbBr3 perovskites films by enhancing optical properties and reducing non-radiative recombination for enhanced stability and performance of perovskite thin films based optoelectronic devices.
Yousaf Hameed Khattak, Faisal Baig, Amal Bouich, Júlia Marí-Guaita, Ahmed Shuja, and Bernabé Marí Soucase
Elsevier BV
Amal Bouich, Joeluis Cerutti Torres, Yousaf Hameed Khattak, Faisal Baig, Julia Marí-Guaita, Bernabé Marí Soucase, Antonio Mendez-Blas, and Pablo Palacios
Elsevier BV
Amal Bouich, Joeluis Cerutti Torres, Hasnae Chfii, Julia Marí-Guaita, Yousaf Hameed Khattak, Faisal Baig, Bernabé Marí Soucase, and Pablo Palacios
Elsevier BV
Amal Bouich, Julia Marí-Guaita, Faisal Baig, Yousaf Hameed Khattak, Bernabé Marí Soucase, and Pablo Palacios
MDPI AG
Presently, we inquire about the organic/inorganic cation effect on different properties based on structure, morphology, and steadiness in preparing a one-step solution of APbI3 thin films, where A = MA, FA, Cs, using spin coating. This study was conducted to understand those properties well by incorporating device modeling using SCAPS-1D software and to upgrade their chemical composition. X-ray diffraction (XRD) was used to analyze the crystal structures. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were conducted to characterize the surface morphology; photoluminescence, Transmission Electron Microscopy (TEM), and a UV–Visible spectrometer helped us to study the optical properties. The (110) plane is where we found the perovskite’s crystalline structure. According to the XRD results and by changing the type of cation, we influence stabilization and the growth of the APbI3 absorber layer. Hither, a homogenous, smooth-surfaced, pinhole-free perovskite film and large grain size are results from the cesium cation. For the different cations, the band gap’s range, revealed by the optical analysis, is from 1.4 to 1.8 eV. Moreover, the stability of CsPbI3 remains excellent for two weeks and in a ~60% humid environment. Based on the UV–Visible spectrometer and photoluminescence characterization, a numerical analysis for fabricated samples was also performed for stability analysis by modeling standard solar-cell structures HTL/APbI3/ETL. Modeling findings are in good agreement with experimental results that CsPbI3 is more stable, showing a loss % in PCE of 14.28%, which is smaller in comparison to FAPbI3 (44.46%) and MAPbI3 (20.24%).
Saira Beg, Faisal Baig, Yousaf Hameed, Adeel Anjum, and Ahmed Khan
Springer Science and Business Media LLC
Yousaf Hameed Khattak, Erika Vega, Faisal Baig, and Bernabé Marí Soucase
Elsevier BV
Bernabé Marí Soucase, Faisal Baig, Yousaf Hameed Khattak, Erika Vega, and Miguel Mollar
Elsevier BV
Yousaf Hameed Khattak, Faisal Baig, Ahmed Shuja, Lahoucine Atourki, Kashif Riaz, and Bernabé Marí Soucase
American Chemical Society (ACS)
Faheem Ahmed, Faisal Baig, Yousaf Hameed Khattak, Hanif Ullah, and Bernabe Mari Soucase
Allerton Press
Safa Jemai, Anouar Hajjaji, Faisal Baig, Imen Harabi, Bernabé Mari Soucase, and Brahim Bessais
Elsevier BV
Yousaf Hameed Khattak, Faisal Baig, Ahmed Shuja, Saira Beg, and Bernabé Marí Soucase
Elsevier BV
Abstract In this work, detailed analysis and guidelines were provided using solar cell capacitance software (SCAPS) to characterize possible novel n i p structures for M A P b I 3 based perovskite solar cells having device power conversion efficiency (PCE) greater than 22%. To accomplish this task, we first optimize the performance of T i O 2 / M A P b I 3 / S p i r o - M e O T A D device structure by finding the optimal parameters of thickness and doping concentration for each layer. After device optimization, we first apply eight different electron transport layers (ETL) to the given device structure by replacing each with T i O 2 in the SCAPS environment and analyzing the effect of each ETL on device performance. After evaluating device structure with different ETL layers, we then apply six different kesterite and quaternary compounds as a possible candidate for the HTL layer. From an analysis, we found forty-nine new possible n i p device structures for each ETL and HTL layer having PCE variation from a value of 2% to 26.69%. Among them the best possible n i p structures, we achieved are E T L / M A P b I 3 / C N T S having PCE greater than 24.84% to the maximum value of 26.69%.
Faisal Baig, Yousaf Hameed Khattak, Ahmed Shuja, Kashif Riaz, and Bernabé Marí Soucase
Elsevier BV
Abstract A novel structure is proposed in this work for the efficiency enhancement of experimentally designed Sb 2 Se 3 solar cell by device optimization, the band offset engineering, and Hole Transport Layer (HTL) with the aid of numerical modeling in SCAPS-1D simulator. J − V result of an experimental device was replicated in SCAPS-1D to validate simulated results. After validation of experimental solar cell result, device optimization of Sb 2 Se 3 / ZnO/FTO solar cell was performed and after device optimization, power conversion efficiency (PCE) of solar cell jumps from 3.59% to 11.29%. The PCE was further enhanced to value 14.46% by adjusting the band offset between Sb 2 Se 3 / ZnO interface. This task was accomplished by introducing Sn doped ZnO layer. Lastly, different HTL layers was applied to Sb 2 Se 3 / Zn Sn , O / FTO solar cell and among them CZTSe as HTL gave highest values of Fill Factor ( FF ) , PCE, open circuit voltage ( V OC ) and short circuit current ( J SC ) , 81.18% and 18.50%, 0.66 V and 34.66 mA / cm 2 .
Saira Beg, Naveed Ahmad, Adeel Anjum, Mansoor Ahmad, Abid Khan, Faisal Baig, and Ahmed Khan
Springer Science and Business Media LLC
Saqib Iqbal, Kashif Riaz, Hassan Imran, Yousaf Hameed Khattak, Faisal Baig, and Zubair Ahmad
Elsevier BV
Abstract As the efficiency of conventional silicon (Si) solar cell is reaching closer to its thermodynamic limit, its tandem integration with emerging perovskite (PVK) solar cell is being widely explored. In this work, we use self-consistent optical and electrical simulations to computationally explore monolithically stacked 2-terminal (2-T), 2-junction (2-J) PVK/Si tandem solar cell. The optical model is based on Lambert-Beer Law while electrical model is based on drift-diffusion approach. The tandem solar cell is explored for both monofacial and bifacial configurations. The simulations show that the cell design for optimal operations is highly dependent on perovskite thickness and albedo. Under optimal design, the bifacial PVK/Si tandem cell exhibits ∼32.5% for average earth albedo of 30%. Moreover, the cell exhibits a remarkable temperature coefficient of ∼-0.27%. Moreover, our simulation results are in good agreement with both experimental and highly intensive optical model based simulation data. With our computationally inexpensive optical model, the optimal cell design for different tandem structures can be explored in a much easier way.
Yousaf Hameed Khattak, Faisal Baig, Hanae Toura, Imen Harabi, Saira Beg, and Bernabé Marí Soucase
Elsevier BV
Abstract The high absorption coefficient and direct optical band gap of a kesterite Cu2ZnSnS4 (CZTS) makes it very promising absorber material in the manufacturing of high efficiency and low-cost thin film photovoltaic cells. Single step electrochemical deposition of CZTS quaternary compound thin films on Indium tin oxide (ITO) substrates is reported in this work. The films were obtained from aqueous solutions at room temperature. The key objective of this work is to examine the effect of annealing temperature on CZTS thin films. Sulfurization of thin films was performed under different temperature range from 400 °C to 550 °C. Good crystal structure was achieved at temperature 500 °C with the complexing agent of trisodium citrate. Deposited films material composition was evaluated by analyzing UV–visible spectroscopy, EDS, FE-SEM and XRD. The thin film with good morphological, structural and optical (1.51 eV) properties was achieved at temperature 500 °C. The results reported in this work will provide an imperative guideline for efficient low-cost design of CZTS thin films.
Hanae Toura, Yousaf Hameed Khattak, Faisal Baig, Bernabe Mari Soucase, and Mohamed Ebn Touhami
Elsevier BV
Abstract Kesterite C u 2 Z n S n S 4 ( C Z T S ) with an optimal band gap of 1.5 e V is an auspicious material to be used as absorber layer high efficiency thin film photovoltaic cells. Effect of substrates on the morphology and structural properties of CZTS kesterite thin films were analyzed by depositing CZTS on Molybdenum, Indium doped tin oxide, and Fluorine doped tin oxide via electrochemical deposition method. The electrolyte contains C u S o 4 , Z n S o 4 , S n S o 4 and N a 2 S 2 O 3 as precursors, with N a 3 C 6 H 5 O 7 and C 4 H 6 O 6 as complexing agents. Electrochemical depositions were carried out at room temperature with a voltage of −1.05 V vs. Ag/AgCl reference electrode. Films were annealed at a temperature around 450 °C and then characterized by X-ray diffraction. The characterization shows the development of CZTS kesterite structure, with a good crystallinity on Mo substrates and phase purity, which were also confirmed by Raman spectroscopy and scanning electron microscopy. Then optical measurements showed that the deposited thin films present a bandgap of around 1.47 eV. Correspondingly, the effect of metal contact work function for these substrates were also investigated with the aid of device modeling software SCAPS. The analysis shows that for given solar cell structure, back contact/CZTS/CdS/ZnO, Mo substrates presented better performance.
Yousaf Hameed Khattak, Faisal Baig, Hanae Toura, Saira Beg, and Bernabé Marí Soucase
Springer Science and Business Media LLC
Copper barium tin sulfide (CBTS) is a direct band gap earth abundant, non-toxic and quaternary semiconductor compound. It is used as absorber because of its direct band gap of 1.9 eV. A numerical guide is proposed for CBTS-based photovoltaic cell to enhance the efficiency of experimentally designed device with introducing Cu2O as back surface field (BSF) layer by means of numerical modeling. Device optimization was performed in SCAPS–1D software under 1.5 AM illumination spectrum. After introducing BSF layer and optimized physical parameters, promising result was achieved with PCE of 9.72%, Voc of 0.81 V, Jsc of 15.73 mA/cm2 and FF of 78.23%. The promising outcomes of this work will give a guideline for the feasible production of high-efficiency inorganic CBTS-based photovoltaic cells.
Faisal Baig, Yousaf Hameed Khattak, Saira Beg, and Bernabé Marí Soucase
Elsevier BV
Abstract S b 2 S e 3 antimony selenide is a great potential for solar cell commercial application with good absorption coefficient and optimal band gap. In recent years the maximum power conversion efficiency (PCE) achieved from S b 2 S e 3 is about 6.5% with C N T / P b S / S b 2 S e 3 / C d S / I T O structure. In this structure P b S works as hole transport material (HTM), C d S as buffer layer and A u as back contact. But the toxic nature of ( C d , P b ) and high cost of A u contact it cannot be considered for commercial application. Because of this reason for the first-time alternate solar cell structure with C u 2 O as HTM layer, I n 2 S 3 as buffer layer and carbon nano tube (CNT) electrode used as a back contact is proposed in this work for S b 2 S e 3 . Device modeling for solar cell with structure C N T / C u 2 O / S b 2 S e 3 / I n 2 S 3 / I T O was performed in solar cell capacitance simulator (SCAPS). After optimization of physical parameters like absorber thickness, acceptor doping of absorber layer, donor doping of buffer and replacing C d S buffer layer with I n 2 S 3 efficiency of experimentally designed cell jumped from 6.5% to 13.20%.
Yousaf Hameed Khattak, Faisal Baig, Hanae Toura, Saira Beg, and Bernabé Marí Soucase
Springer Science and Business Media LLC
A MASnI3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{MASnI}}_{3} $$\\end{document} -based perovskite solar cell with structure CZTSe/MASnI3/TiO2/FTO\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{CZTSe}}/{\\hbox{MASnI}}_{3} /{\\hbox{TiO}}_{ 2} /{\\hbox{FTO}} $$\\end{document} was proposed in this work. To accomplish this task, first, the effect of different kesterite and stannite CZTS,CBTS,CFTS,CMTS,CNTS,CZTSe\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ \\left( {{\\hbox{CZTS}}, {\\hbox{CBTS}}, {\\hbox{CFTS}}, {\\hbox{CMTS}}, {\\hbox{CNTS}}, {\\hbox{CZTSe}}} \\right) $$\\end{document} compounds as hole transport layer HTL\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ \\left( {\\hbox{HTL}} \\right) $$\\end{document} simulations were performed in a solar cell capacitance simulator. All simulations were performed in 1.5G1sun\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ 1.5G \\;1\\;{\\hbox{sun}} $$\\end{document} light spectrum. From the results it was found that valance band offset of the absorber/HTL\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{HTL}} $$\\end{document} interface affects the performance of the solar cell, and among different HTL\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{HTL}} $$\\end{document}, CZTSe\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{CZTSe}} $$\\end{document} is proven to be a suitable candidate for HTL. After selection of CZTSe\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{CZTSe}} $$\\end{document} as HTL\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{HTL}} $$\\end{document} for aMASnI3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{MASnI}}_{3} $$\\end{document} solar cell, device optimization was performed by analyzing the absorber and HTL\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{HTL}} $$\\end{document} thicknesses and doping concentrations on device performance. After analysis, improved functional parameters were attained with a conversion efficiency of 19.52%, short-circuit current of 29.45 mA/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{mA}}/{\\hbox{cm}}^{2} $$\\end{document} open circuit voltage of 0.86V\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ 0.86\\;{\\hbox{V}} $$\\end{document} and fill factor of 76.74%. The concept presented in this work for modeling of MASnI3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\hbox{MASnI}}_{3} $$\\end{document} -based devices, will categorically provide ways for the feasible fabrication of a high-efficiency solar cell.
Hanae Toura, Yousaf Hameed Khattak, Faisal Baig, Bernabe Mari Soucase, Mohamed Ebn Touhami, and Bouchaib Hartiti
Elsevier BV
Abstract C u 2 Z n S n S 4 kesterite thin films have been electrochemically deposited on indium doped tin oxide ( I T O ) coated glass substrates from an aqueous electrolyte solution containing C u S o 4 , Z n S o 4 , S n S o 4 and N a 2 S 2 O 3 precursors in one step deposition. The purpose of this work is to reduce the cost of fabrication of C Z T S thin films with good crystallinity by investigated the effect of complexing agent N a 2 S o 4 with N a 3 C 6 H 5 O 7 on annealing temperature of C Z T S thin film. Based on the results it was found that good crystal structure was achieved at temperature 350 °C, that is below the reported annealing temperature in the literature. The electrodeposition process was maintained at room temperature with a working potential set at −1.05 V vs. A g / A g C l . The annealed C Z T S films were characterized by X-ray diffraction revealed the formation of a crystalline phase C Z T S with major and intense peaks. Scanning electron microscopy ( S E M ) analysis stick to E D S show compact and uniform surface morphology with a spherical crystalline geometry and near stoichiometry metal atomic ratio for the different samples prepared. Atomic force microscopy ( A F M ) analysis confirms these results. From UV–visible spectroscopy, bandgap of around 1.5 e V was estimated for the kesterite thin films.
Shafi Ullah, Amal Bouich, Faisal Baig, Yousaf hameed Khattak, Miguel Mollar, Bernabe Mari, and Hanif Ullah
IEEE
Binary SnS<inf>2</inf> and ternary Sn<inf>1-x</inf> Fe<inf>x</inf>S<inf>2</inf> (X = Fe (2.5%, 5% and 10%) powders have been successfully prepared by hydrothermal method. The structure, morphology, elemental composition, optical properties of the obtained product were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive spectroscopy (EDS) and UV-vis spectroscopy. It was found that the Fe could be effectively incorporated in the obtained Sn<inf>1-x</inf>Fe<inf>x</inf>S<inf>2</inf> compounds. According to XRD analysis, increased concentration of Fe in the Sn<inf>1-x</inf>Fe<inf>x</inf>S<inf>2</inf> compounds results in a gradual degradation of the crystallinity. The energy band was found to be 1.5 eV, 2.1 eV and 2.2 eV for SnS and SnS2 respectively. Mott-Schottky measurements was performed for SnS<inf>2</inf> to identify the n-type character of SnS<inf>2</inf> samples.
Faisal Baig, Yousaf Hameed Khattak, Safa Jemai, Bernabé Marí Soucase, and Saira Beg
Elsevier BV
Abstract Water splitting to produce hydrogen using semiconductor material has been a focus of intense research in last few years. The main challenge to accomplish this task is to find a suitable band gap, non-toxic and earth abundant material for photoelectrochemical (PEC) process. α - F e 2 O 3 is proven to be a suitable candidate for PEC process because of its stability, non-toxic nature, abundance is nature and a narrow band gap of (1.9–2.2 eV). In this work V-doped α - F e 2 O 3 cubic particles were deposited on ITO substrate by hydrothermal and annealing method. The composition of V was controlled in bath solution by changing the concentration of V from 0 to 3%. After successful deposition, all samples were characterized by structural studies using x-ray diffraction, morphological studies using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), optical studies using UV–VIS spectroscopy to measure band gap (eV) and chronoamperometry was applied to measure photo response of samples. SEM and TEM studies revealed cubic particles with size varying from 350 nm to 400 nm. XRD studies confirms hematite structure for V-doped and undoped α - F e 2 O 3 samples. Optical studies show a variation of band gap from 1.89 eV ∼ 2.09 eV. Chronoamperometry studies revealed that 3%V-doped samples displayed 16 times higher PEC activity with respect to undoped α - F e 2 O 3 film. The higher current density can be attributed to band gap narrowing and increased donor density. Result provided in this work can provide an imperative guideline for the design of efficient photocatalysis application using α - F e 2 O 3 .
Shafi Ullah, Amal Bouich, Hanif Ullah, Erika Vega Fleitas, Faisal Baig, Yousaf Hameed, Miguel Mollar, and Bernabé Marí
The Electrochemical Society
. Binary thin disulfide (SnS 2 ) and ternary Sn 1-x Fe x S 2 (X = Fe (2.5%, 5% and 10%) which has huge potentials in the visible-light rang due to its band gap 2.2-2.6 eV. Herein, SnS 2 and Sn 1-x Fe x S 2 powders have been synthesize by a fruitful hydrothermal method. The structure, morphology, elemental composition and optical properties of the obtained product were characterized by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Electron Dispersive Spectroscopy (EDS) and UV-Vis spectroscopy. It was found that the Fe could be effectively incorporated in the obtained Sn 1-x Fe x S 2 compounds. According to XRD analysis, increased concentration of Fe in the Sn 1-x Fe x S 2 compounds results in a gradual degradation of the crystallinity. The optical bandgap was found to be 1.52 eV, 2.22 eV, 2.38 eV and 2.48 eV, for the SnS, SnS 2 , Fe 5% and Fe 10% respectively. Mott–Schottky measurements performed for SnS 2 confirm the n-type character of SnS 2 samples.